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mar. 2002 ?? ? ? ? measurement point of case temperature ? ? ? ? t 1 terminal t 2 terminal ? t 2 terminal gate terminal ??? e 10.5 max. 4.5 16 max. 12.5 min. 3.2 0.2 3.8 max. 7.0 1.0 0.8 4.5 2.5 2.5 2.6 0.5 1.3 3.6 0.2 voltage class type name bcr20am outline drawing dimensions in mm to-220 mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type application vacuum cleaner, light dimmer, copying machine, other control of motor and heater i t (rms) ................................................................ 20a v drm ................................................................. 600v i fgt ! , i rgt ! , i rgt # .................................... 20ma symbol a a a 2 s w w v a c c g 20 200 167 5 0.5 10 2 ?0 ~ +125 ?0 ~ +125 2.0 ? 1. gate open. value corresponding to 1 cycle of half wave 60hz, surge on-state current i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight parameter ratings unit conditions commercial frequency, sine full wave 360 conduction, tc=109 c ? 3 60hz sinewave 1 full cycle, peak value, non-repetitive typical value v v maximum ratings voltage class unit 12 600 720 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 refer to the page 6 as to the product guaranteed maximum junction temperature 150 c
mar. 2002 supply voltage time time time main current main voltage (di/dt) c v d (dv/dt) c electrical characteristics mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type performance curves ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. case temperature is measured at the t2 terminal 1.5mm away from the molded case. ? 4. the contact thermal resistance r th (c-f) in case of greasing is 1 c/w. ? 5. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c t j =125 c, v drm applied t c =25 c, i tm =30a t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c, v d =1/2v drm junction to case ? 3 ? 4 t j =125 c unit repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage limits max. 2.0 1.5 1.5 1.5 1.5 20 20 20 0.8 ! @ # ! @ # typ. min. 0.2 10 ma v v v v ma ma ma v c/w v/ s symbol parameter test conditions test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c 2. rate of decay of on-atate commutating current (di/dt) c = 10a/ms 3. peak off-state voltage v d =400v refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 3.8 0.6 1.4 2.2 3.0 1.0 1.8 2.6 3.4 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 125 c t j = 25 c 10 0 23 57 10 1 160 80 23 57 10 2 120 40 200 240 0 maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 5
mar. 2002 mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 160 120 100 60 20 0 0 51525 40 80 140 10 20 30 30 20 10 40 0 0 510 20 15 25 30 10 ? 10 0 2 3 57 2 3 57 2 3 57 10 1 10 2 23 57 10 3 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.6 0.0 10 1 10 3 7 5 3 2 ?0 ?0 20 10 2 7 5 4 4 3 2 60 100 140 ?0 0 40 80 120 10 0 10 2 5 ?0 ?0 20 10 1 5 7 2 3 7 2 3 10 3 5 7 2 3 60 100 140 ?0 0 40 80 120 10 1 10 2 23 57 23 57 23 57 10 3 10 4 7 5 3 2 10 ? 7 5 3 2 10 0 7 5 3 2 10 1 10 2 v gd = 0.2v p gm = 5w i fgt i i rgt i i rgt iii p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii gate characteristics ( , ? and ?? ) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c ) gate trigger current (t j = 25 c ) gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage (t j = t c ) gate trigger voltage (t j = 25 c ) typical example maximum transient thermal impedance characteristics (junction to case) transient thermal impedance ( c/ w) conduction time (cycles at 60hz) maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) 360 conduction resistive, inductive loads 360 conduction resistive, inductive loads curves apply regardless of conduction angle allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) typical example
mar. 2002 mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c ?0 ?0 ?0 0 20 40 60 80 100 120 140 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 10 3 5 7 3 2 5 4 4 7 3 2 ?0 ?0 20 10 2 60 100 140 ?0 0 40 80 120 10 1 140 40 ?0 ?0 ?0 0 20 60 80 100 120 10 3 7 5 3 2 10 4 7 5 3 2 10 5 7 5 3 2 10 2 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 40 80 140 1.0 2.0 3.0 160 120 100 60 20 0 25 30 01520 40 80 140 510 160 100 80 40 20 0 140 40 ?0 ?0 ?0 0 20 60 80 140 100120 60 120 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are black painted aluminum and greased natural convection allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins curves apply regardless of conduction angle resistive, inductive loads repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current (t j = t c ) repetitive peak off-state current (t j = 25 c ) typical example junction temperature ( c) 100 (%) holding current (t j = t c ) holding current (t j = 25 c ) holding current vs. junction temperature typical example ih(typ) = 20ma laching current vs. junction temperature laching current (ma) junction temperature ( c) t 2 + , g + t 2 , g typical example t 2 + , g typical example distribution breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage (t j = t c ) breakover voltage (t j = 25 c ) typical example 160 160 t 2.3 100 100 t 2.3 60 60 t 2.3
mar. 2002 mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type refer to the page 6 as to the product guaranteed maximum junction temperature 150 c 10 1 10 3 7 5 3 2 10 0 23 57 10 1 10 2 7 5 3 2 23 57 10 2 i fgt i i rgt i i rgt iii 10 1 10 2 23 10 1 57 357 10 2 7 5 3 2 7 5 7 3 2 10 0 10 1 7 23 5 7 23 5 23 5 10 2 10 3 7 10 4 120 0 20 40 60 80 100 140 330 ? 330 ? 330 ? 6 ? 6 ? 6 ? 6v 6v 6v a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) i quadrant iii quadrant typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz minimum charac- teristics value commutation characteristics critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) typical example gate trigger current vs. gate current pulse width gate trigger pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc ) supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
mar. 2002 ?? ? ? ? measurement point of case temperature ? ? ? ? t 1 terminal t 2 terminal ? t 2 terminal gate terminal ??? e 10.5 max. 4.5 16 max. 12.5 min. 3.2 0.2 3.8 max. 7.0 1.0 0.8 4.5 2.5 2.5 2.6 0.5 1.3 3.6 0.2 voltage class type name bcr20am outline drawing dimensions in mm to-220 mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type application vacuum cleaner, light dimmer, copying machine, other control of motor and heater (warning) 1. refer to the recommended circuit values around the triac before using. 2. be sure to exchange the specification before using. if not exchanged, general triacs will be supplied. i t (rms) ................................................................ 20a v drm ................................................................. 600v i fgt ! , i rgt ! , i rgt # .................................... 20ma symbol a a a 2 s w w v a c c g 20 200 167 5 0.5 10 2 40 ~ +150 40 ~ +150 2.0 ? 1. gate open. value corresponding to 1 cycle of half wave 60hz, surge on-state current i t (rms) i tsm i 2 t p gm p g (av) v gm i gm t j t stg rms on-state current surge on-state current i 2 t for fusing peak gate power dissipation average gate power dissipation peak gate voltage peak gate current junction temperature storage temperature weight parameter ratings unit conditions commercial frequency, sine full wave 360 conduction, tc=134 c ? 3 60hz sinewave 1 full cycle, peak value, non-repetitive typical value v v maximum ratings voltage class unit 12 600 720 symbol v drm v dsm parameter repetitive peak off-state voltage ? 1 non-repetitive peak off-state voltage ? 1 the product guaranteed maximum junction temperature 150 c (see warning.)
mar. 2002 supply voltage time time time main current main voltage (di/dt) c v d (dv/dt) c electrical characteristics mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type performance curves ? 2. measurement using the gate trigger characteristics measurement circuit. ? 3. case temperature is measured at the t2 terminal 1.5mm away from the molded case. ? 4. the contact thermal resistance r th (c-f) in case of greasing is 1 c/w. ? 5. test conditions of the critical-rate of rise of off-state commutating voltage is shown in he table below. i drm v tm v fgt ! v rgt ! v rgt # i fgt ! i rgt ! i rgt # v gd r th (j-c) (dv/dt) c t j =125 c/150 c, v drm applied t c =25 c, i tm =30a t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =25 c, v d =6v, r l =6 ? , r g =330 ? t j =125 c/150 c, v d =1/2v drm junction to case ? 3 ? 4 tj=125 c/150 c unit repetitive peak off-state current on-state voltage gate trigger voltage ? 2 gate trigger current ? 2 gate non-trigger voltage thermal resistance critical-rate of rise of off-state commutating voltage limits max. 2.0/3.0 1.5 1.5 1.5 1.5 20 20 20 0.8 ! @ # ! @ # typ. min. 0.2/0.1 10/1 ma v v v v ma ma ma v c/w v/ s symbol parameter test conditions test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature t j =125 c/150 c 2. rate of decay of on-atate commutating current (di/dt) c = 10a/ms 3. peak off-state voltage v d =400v the product guaranteed maximum junction temperature 150 c (see warning.) 10 0 23 57 10 1 160 80 23 57 10 2 120 40 200 240 0 4.0 0.5 1.5 2.5 3.0 1.0 2.0 3.5 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 t j = 150 c t j = 25 c maximum on-state characteristics on-state current (a) on-state voltage (v) rated surge on-state current surge on-state current (a) conduction time (cycles at 60hz) ? 5
mar. 2002 mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 160 120 100 60 20 0 0 51525 40 80 140 10 20 30 30 20 10 40 0 0 510 20 15 25 30 10 1 10 0 2 3 57 2 3 57 2 3 57 10 1 10 2 23 57 10 3 1.4 1.2 1.0 0.8 0.6 0.4 0.2 1.6 0.0 10 1 10 3 7 5 3 2 10 2 7 5 4 4 3 2 10 0 10 2 5 60 20 20 10 1 5 7 2 3 7 2 3 10 3 5 7 2 3 60 100 140160 40 0 40 80 120 60 20 20 60 100 140160 40 0 40 80 120 i fgt i i rgt i i rgt iii 10 1 10 2 2 3 57 2 3 57 2 3 57 10 3 10 4 7 5 3 2 10 1 7 5 3 2 10 0 7 5 5 3 2 10 1 v gd = 0.1v p gm = 5w p g(av) = 0.5w v gm = 10v v gt = 1.5v i gm = 2a i fgt i, i rgt i, i rgt iii gate characteristics ( , ? and ?? ) gate voltage (v) gate current (ma) gate trigger current vs. junction temperature junction temperature ( c) 100 (%) gate trigger current (t j = t c ) gate trigger current (t j = 25 c ) gate trigger voltage vs. junction temperature junction temperature ( c) 100 (%) gate trigger voltage (t j = t c ) gate trigger voltage (t j = 25 c ) typical example transient thermal impedance ( c/ w) conduction time (cycles at 60hz) maximum on-state power dissipation on-state power dissipation (w) rms on-state current (a) 360 conduction resistive, inductive loads curves apply regardless of conduction angle allowable case temperature vs. rms on-state current case temperature ( c) rms on-state current (a) 360 conduction resistive, inductive loads typical example maximum transient thermal impedance characteristics (junction to case)
mar. 2002 mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 160 120 100 60 20 0 25 30 01520 40 80 140 510 60 60 t 2.3 160 160 t 2.3 100 100 t 2.3 160 120 100 60 20 0 4.0 0 0.5 1.5 2.5 3.5 5.0 4.5 40 80 140 1.0 2.0 3.0 160 100 80 40 20 0 140 60 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 10 3 5 7 3 2 5 4 4 7 3 2 10 2 10 1 160 140 40 40 60 20 0 20 60 80 100 120 160 140 40 40 60 20 0 20 60 80 100 120 160 140 40 40 60 20 0 20 60 80 100 120 160 140 40 40 60 20 0 20 60 80 100 120 10 3 7 5 3 2 10 2 10 3 7 5 3 2 10 3 7 5 3 2 5 3 2 allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) all fins are black painted aluminum and greased natural convection curves apply regardless of conduction angle, resistive, inductive loads allowable ambient temperature vs. rms on-state current ambient temperature ( c) rms on-state current (a) natural convection no fins curves apply regardless of conduction angle resistive, inductive loads repetitive peak off-state current vs. junction temperature junction temperature ( c) 100 (%) repetitive peak off-state current (t j = t c ) repetitive peak off-state current (t j = 25 c ) junction temperature ( c) 100 (%) holding current (t j = t c ) holding current (t j = 25 c ) holding current vs. junction temperature typical example ih(typ) = 20ma laching current vs. junction temperature laching current (ma) junction temperature ( c) t 2 + , g + t 2 , g typical example t 2 + , g typical example distribution breakover voltage vs. junction temperature junction temperature ( c) 100 (%) breakover voltage (t j = t c ) breakover voltage (t j = 25 c ) typical example typical example
mar. 2002 mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 10 1 10 3 7 5 3 2 10 0 23 57 10 1 10 2 7 5 3 2 23 57 10 2 10 1 10 2 23 10 1 57 357 10 2 7 5 3 2 7 5 7 3 2 10 0 10 1 23 57 10 2 23 57 10 3 23 57 10 4 120 0 20 40 60 80 100 140 160 10 1 23 57 10 2 23 57 10 3 23 57 10 4 120 0 20 40 60 80 100 140 160 10 1 10 2 23 10 1 57 357 10 2 7 5 3 2 7 5 7 3 2 10 0 typical example t j = 125 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage (t j = 125 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) typical example t j = 150 c i quadrant iii quadrant breakover voltage vs. rate of rise of off-state voltage (t j = 150 c) rate of rise of off-state voltage (v/ s) 100 (%) breakover voltage ( dv/dt = xv/ s ) breakover voltage ( dv/dt = 1v/ s ) i quadrant iii quadrant typical example t j = 125 c i t = 4a = 500 s v d = 200v f = 3hz minimum charac- teristics value critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) commutation characteristics (t j = 125 c) i quadrant iii quadrant typical example t j = 150 c i t = 4a = 500 s v d = 200v f = 3hz minimum charac- teristics value critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a /ms) commutation characteristics (t j = 150 c) supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c i fgt i i rgt i i rgt iii typical example gate trigger current vs. gate current pulse width gate trigger pulse width ( s) 100 (%) gate trigger current ( tw ) gate trigger current ( dc )
mar. 2002 mitsubishi semiconductor ? triac ? bcr20am medium power use non-insulated type, planar passivation type the product guaranteed maximum junction temperature 150 c (see warning.) 6 ? 6 ? 6 ? 6v 6v 6v 330 ? 330 ? 330 ? a v a v a v test procedure 1 test procedure 3 test procedure 2 gate trigger characteristics test circuits c 1 c 1 = 0.1~0.47 f r 1 = 47~100 ? c 0 = 0.1 f r 0 = 100 ? c 0 r 0 r 1 load recommended circuit values around the triac

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